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March 2013
FQP7P06
P -Channel QFET ? MOSFET
-60 V, -7 A, 410 m Ω
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor ? ’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
Features
? -7 A, -60 V, R DS(on) =410 mΩ(Max.) @V GS =-10 V, I D =-3.5 A
? Low G ate C harge ( Typ. 6.3 nC)
? Low Crss ( Typ. 25 pF)
? 100% A valanche T ested
? 175°C Maximum Junction Temperature Rating
S
!
G !
●
●
? ▲
●
G D S
Absolute Maximum Ratings
TO-220
T C = 25°C unless otherwise noted
!
D
Symbol
V DSS
Drain-Source Voltage
Parameter
FQP7P06
-60
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
-7.0
-4.95
A
A
I DM
Drain Current
- Pulsed
(Note 1)
-28
A
V GSS
Gate-Source Voltage
± 25
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T C = 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
90
-7.0
4.5
-7.0
45
0.3
mJ
A
mJ
V/ns
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 " from case for 5 seconds
-55 to +175
300
°C
°C
Thermal Characteristics
Symbol
R θ JC
R θ CS
R θ JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.5
--
Max
3.35
--
62.5
Unit
°C / W
°C / W
°C / W
?20 01 Fairchild Semiconductor Corporation
FQP 7P06 Rev. C0
www.fairchildsemi.com
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